2n5210 datasheet pdf storage

Tstg storage temperature 65150 thermal characteristics. Operating and storage junction temperature range tj, tstg. C unless specified otherwise description symbol test condition 2n5415 2n5416 units collector emitter breakdown voltage bv ceosusi c50ma,i b. Storage time 2n3905 ts vcc 3v, ic 10ma, ib1 ib2 1ma. Buy the nte electronics 2n5210 online at newark canada. Pure storage flasharrayx, the worlds first 100% allflash endtoend nvme and nvmeof array, now optionally includes a storage class memory boost to address the most demanding enterprise applications performance requirements.

Onsemi, alldatasheet, datasheet, datasheet search site for electronic. If the checkbox is invisible, the corresponding document cannot be downloaded in batch. Storage temperature range t stg40 to 150 c stud torque 30 in. Absolute maximum ratings ta 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Description with to220 package high power dissipation applications for used in medium power and amplifier applications pinning pin description 1base 2 collector. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. For details, please refer to rohm mounting specification. Case r jc 150 cw stresses exceeding those listed in the maximum ratings table may damage the device. Epitaxial planar npn description the 2n1711 is a silicon planar epitaxial npn transistor in jedec to39 metal case. The lm4lm234lm334 are 3terminal adjustable current sources featuring 10,000. General purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features. C temperature range thermal resistance junction to ambient r thja 150. C547c datasheet 45 v, 100 ma npn transistor nxp, bc547c datasheet, c547c pdf, c547c pinout, c547c manual, c547c schematic, c547c equivalent, c547c data.

Ja thermal resistance, junction to ambient 200 357 cw. It is intented for use in high performance amplifier, oscillator and switching circuits. Npn general purpose amplifier, 2n5210 datasheet, 2n5210 circuit, 2n5210 data sheet. Ti octal transparent dtype latches with 3state outputs,alldatasheet, datasheet. Hc573a datasheet pdf hca datasheet, hca circuit, hca data sheet. Jun 01, 2016 c547c datasheet 45 v, 100 ma npn transistor nxp, bc547c datasheet, c547c pdf, c547c pinout, c547c manual, c547c schematic, c547c equivalent, c547c data.

Lenovo thinksystem ds6200 san array offers breakthrough performance and scale at bestinclass pricing, along with 99. Insulation withstand voltage rms from all three leads to external heatsink. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal resistance, junction to case 2n3870 2n3873, 2n38962n3899 2n61712n6174 r. Drain current as a function of junction temperature. Description amplifier transistorsnpn silicon download 6 pages. Npn general purpose amplifier mpsa18 this device is designed for low noise, high gain, applications at collector currents from 1 a to 50 ma. Transistor noise model 2 motorola smallsignal transistors, fets and diodes device data 2n5209 2n5210 noise characteristics vce 5. The 2n1711 is also used to advantage in amplifiers where low noise is an important factor. The easytouse management interface makes complex administrative storage tasks simple, including setup in less than 15. General purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features low forward voltage drop low leakage current high forward surge capability solder dip 275 c max. Motorola order this document semiconductor technical data by 2n5209d amplifier transistors npn silicon 2n5209 2n5210 collector 3 2 base 1 emitter 1 2 3 maximum ratings case 2904, style 1 rating symbol value unit to92 to226aa collectoremitter voltage vceo 50 vdc collectorbase voltage vcbo 50 vdc emitterbase voltage vebo 4. The central semiconductor 2n5209 and 2n5210 are silicon npn transistors, manufactured by the epitaxial.

Honeywells lynx touch 5200 allinone home and business control system features a bright, 4. Free devices maximum ratings rating symbol value unit collector. Fairchild, alldatasheet, datasheet, datasheet search site for electronic. Amplifier transistorsnpn silicon, 2n5210 datasheet, 2n5210 circuit, 2n5210 data sheet. Tables of equivalents between russian and western parts. Buy your 2n5210 from an authorized nte electronics distributor. Savantic semiconductor product specification 2 silicon npn power transistors 2n5490 2n5492 2n5494 2n5496 characteristics tj25 unless otherwise specified symbol parameter conditions min typ.

Here i collected all information i have about replacements among western parts to the russian components i use in my constructions. Mjd340 high voltage power transistors on semiconductor. Absolute maximum ratings ta 25c unless otherwise noted. Check stock, availability, and view datasheets at newark canada an authorized nte electronics supplier. Colle ctor power dissipation junction tempera ture storage temperature conditions op en emitter open base. It is typically used for lowcurrent, medium voltage, and moderate speed purposes. Pnp silicon high voltage transistor 2n 5415, 16 to39 metal. The easytouse management interface makes complex administrative storage tasks simple, including setup in less than 15 minutes. General purpose plastic rectifier vishay intertechnology. A listing of scillcs productpatent coverage may be accessed at. Data sheet pure storage flasharrayx accelerate core applications and provide a modern data experience. The 2n3904 is common generalpurpose lowpower npn transistor used amplifying or switching applications. Operating junction temperature 150 oc ordering code marking package shipment 2n3904 2n3904 to92 bulk 2n3904ap 2n3904 to92 ammopack to92 bulk to92 ammopack 15. The parts are divided into three tables bipolar, fieldeffect transistors and digital ics.